| Books "GaN-based Materials and Devices - Growth, Fabrication, Characterization
and Performance", Selected Topics
in Electronics and Systems - Vol. 33, ed. By M. S. Shur and R.
F. Davis, World Scientific Publishing Company Pte. Ltd. Singapore,
2004.
Journal Papers
R. F. Davis, S. Einfeldt, E.A. Preble, A.M. Roskowski,
Z. J. Reitmeier, and
P.Q. Miraglia, "Gallium Nitride and Related
Materials: Challenges in Materials
Processing", Invited Paper.
Acta Materialia 51(19),
5961-5979 (2003).
K. M. Tracy, W. J. Mecouch, R. J. Nemanich and R. F. Davis, "Preparation
and Characterization of Atomically Clean, Stoichiometric Surfaces
of n- and p-type GaN(0001)", Journal of Applied Physics 94, 3163-3172
(2003).
B. J. Coppa, P. J. Hartlieb, C. C. Fulton, B. J. Rodriguez, B.
J. Shields, R. J. Nemanich and R. F. Davis, "In situ Cleaning and
Characterization of Oxygen- and Zinc-terminated n-type ZnO{0001}Surfaces,"
Journal of Applied Physics, 95, 5856-5864 (2004).
T. P. Smith, H. A. McLean, D. J. Smith and R. F. Davis, "Homoepitaxial
Growth of ZnO(000) Thin Films va Metalorganic Vapor Phase Epitaxy
and their Characterization", Journal of Crystal Growth 265, 390-398
(2004).
R. I. Barabash, G. E. Ice, W. Liu, S. Einfeldt, A. M. Roskowski
and R. F. Davis, "Local Strain, Defects, and Crystallographic Tilt
in GaN(0001) Layers Grown by Maskless Pendeo-epitaxy from X-ray
Microdiffraction" Journal of Applied Physics 97, 102-109 (2005).
J. M. Pierce, B. T. Adekore, F. A. Stevie and R. F. Davis "Growth
of Dense ZnO Films via MOVPE on GaN(0001) Epilayers using a Low/High
Temperature Sequence", Journal of Crystal Growth, 277, 345-351
(2005).
Roland Kröger, Sven Einfeldt, Rosa Chierchia, Detlef Hommel,
Zachary J. Reitmeier
Robert F. Davis and Quincy K. K. Liu, "On the Microstructure
of AlxGa1-xN Layers Grown on 6H-SiC(0001) Substrates", Journal
of Applied Physics 97, 825 - 892 (2005).
Ji-Soo Park, Daryl Fothergill, Xiyao Zhang1, Zachary J. Reitmeier,
John F. Muth and Robert F. Davis, "Growth and Fabrication of
AlGaN-based Ultraviolet Light Emitting Diodes on 6H-SiC(0001)
Substrates and the Effect of Carrier-blocking Layers on their
Emission Characteristics", Journal of Materials Science and Engineering
B 127, 269-179 (2006).
R. I. Barabash, O. M. Barabash, G. E. Ice, C. Roder, S. Figge,
S. Einfeldt, D. Hommel, T. M. Katona, J. S. Speck, S. P. DenBaars, & Robert
F. Davis, "Characterization of Crystallographic Properties and
Defects via X-ray Microdiffraction in GaN (0001) Layers", Physica
Status Solidi A - Applications and Materials Science 203, 142-148
(2006).
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